摘要
光电耦合器4N55/883B发生一例两管腿间阻值不稳定的失效,并且在进行失效分析的过程中,该失效现象消失。经过运用一系列的失效分析技术方法进行试验,并结合理论分析,最终确认了该失效案例的失效机理,明确了失效原因,得到该失效为过电应力导致器件烧毁失效的结论。采用了包括图示仪检测、X光检查、扫描电子显微镜(SEM)检查、能量散射谱(EDS)分析以及聚焦离子束(FIB)制样等先进的分析技术和方法,对其它半导体器件的失效分析也有借鉴作用。
An optocoupler（4N55/883B） presented a failure behavior of unstable resistance between two pins,and the failure phenomena was lost during failure analysis.After a series of tests and analysis,the failure mechanism was determined and the failure cause was identified.It is found that the device is burned due to the electrical overstress（EOS） on it.Some advanced techniques were used in the analysis,including tracer test,x-ray detection,scanning electron microscopy（SEM）,energy dispersive spectroscopy（EDS） and focus ion beam（FIB）.
出处
《电子产品可靠性与环境试验》
2011年第1期22-27,共6页
Electronic Product Reliability and Environmental Testing
