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在r面蓝宝石上生长的a面掺硅GaN的光学和电学性质研究 被引量：1

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摘要 在r面蓝宝石(Al2O3)衬底上生长了非极性掺硅的a面GaN薄膜,用光致发光(PL)谱,高分辨X射线衍射仪(HRXRD),原子力显微镜(AFM),和霍尔测量研究了材料的光学和电学性质.结果表明,Si的掺入会使材料的结晶质量和形貌出现微小的退化.黄带也随着SiH4流量的增加而提高.但是随着硅的掺入,材料迁移率极大提高,这种现象主要是由于镓空位(VGa)被填补引起的.
作者 许晟瑞 周小伟 郝跃 杨林安 张进成 毛维 杨翠 蔡茂世 欧新秀 史林玉 曹艳荣
机构地区 西安电子科技大学微电子研究所宽禁带半导体材料与器件重点实验室
出处 《中国科学：技术科学》 EI CSCD 北大核心 2011年第2期234-238,共5页 Scientia Sinica(Technologica)
基金 国家科技重大专项(批准号:2008ZX01002-002) 国家自然科学基金重大项目(批准号:60890191) 国家自然科学基金重点项目(批准号:60736033) 中央高校基本科研业务费专项资金(批准号:JY10000904009)资助
关键词 非极性 GAN HRXRD 光致发光
分类号 O482.3 [理学—固体物理]
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参考文献17

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二级参考文献33

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共引文献1

同被引文献7

  • 1蔡茂世.Mg掺杂A1GaN的MOCVD生长及表征[M].西安:西安电子科技大学出版社,2011.
  • 2EUNSOON O H, HYEONGSOO P, YONGJO P. Excitation density dependence of photoluminesceace in GaN: Mg [J]. Apply Physics Letter, 1998,72( 1 ) :70 - 72.
  • 3KAUFMANN U, KUNZER M, MAIER M, et al. Origin of de- fect- related photoluminescence bands in doped and nomi- nally undoped GaN [J]. Apply Physics Letter, 1998, 72 (11) :1326 - 1333.
  • 4ISHER S F, ETZEL C W, HALLER E E, et al. On p - type doping in GaN--acceptor binding energies [ J ]. Apply Phys- ics Letter, 1995,67 (9) : 1298 - 1302.
  • 5KAUFMANN U, KUNZER M,MAIER M,et il. Nature of the 2.8 eV photoluminescence band in Mg doped GaN [J]. Ap- ply Physics Letter, 1998,72( 11 ) : 1326 - 1332.
  • 6XU Chengrui, HAO Yue. Stress and morphology of a nonpolar a - plane GaN layer on r - plane sapphire substrate [ J ]. China Physics B,2011,20(10) :107 -112.
  • 7许晟瑞,段焕涛,郝跃,张进城,张金凤,倪金玉,胡仕刚,李志明.(1■02)r面蓝宝石生长的(11■0)a面氮化镓研究[J].西安电子科技大学学报,2009,36(6):1049-1052. 被引量：3

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中国科学：技术科学
2011年 第2期

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