期刊文献+

Manufacture tolerance analysis and control for a polymer-on-silicon Mach-Zehnder-interferometer-based electro-optic switch 被引量:2

Manufacture tolerance analysis and control for a polymer-on-silicon Mach-Zehnder-interferometer-based electro-optic switch
原文传递
导出
摘要 To enhance the electro-optic (EO) modulation efficiency and realize the impedance-matching, a polymer-on-silicon multi-mode interference (MMI) Mach-Zehnder interferometer (MZI)-based electro-optic (EO) switch is designed and optimized. Under the central operation wavelength of 1550 nm, the driving voltages of the designed switch are 0 and ±1.375 V, respectively, with a short active region length of 5 mm, and the characteristic impedance of the electrode is about 49.6 ?. The manufacture tolerance is analyzed for instructing the device fabrication. The results show that to realize ideal switching function, high fabrication accuracy on the buffer thickness, core thickness, electrode width and MMI waveguide width is extremely required, and a small voltage drift of-0.03-0.05 V is also expected for reducing the crosstalk to less than-30 dB. The allowed 3 dB bandwidth is 60 nm, and within this spectrum range, the insertion loss and crosstalk are less than 6.71 dB and-30 dB, respectively. To enhance the electro-optic (EO) modulation efficiency and realize the impedance-matching, a polymer-on-silicon multi- mode interference (MMI) Mach-Zehnder interferometer (MZI) -based electro-optic (EO) switch is designed and optimized. Under the central operation wavelength of 1550 nm, the driving voltages of the designed switch are 0 and + 1.375 V, respectively, with a short active region length of 5 mm, and the characteristic impedance of the electrode is about 49.6 Ω. The manufacture tolerance is analyzed for instructing the device fabrication. The results show that to realize ideal switching function, high fabrication accuracy on the buffer thickness, core thickness, electrode width and MMI waveguide width is extremely required, and a small voltage drift of-0.03-0.05 V is also expected for reducing the crosstalk to less than -30 dB. The allowed 3 dB bandwidth is 60 nm, and within this spectrum range, the insertion loss and crosstalk are less than 6.71 dB and -30 dB, respectively.
出处 《Optoelectronics Letters》 EI 2011年第2期101-104,共4页 光电子快报(英文版)
基金 supported by the National Natural Science Foundation of China (Nos. 60706011, 60807029, and 61077041) the Fund of Ministry of Education of China (Nos. 20070183087 and 20090061110041) the Science and Technology Fund of Jilin Province of China (No.20080125) the National Basic Research Development Program of China (No. 2006CB302803)
关键词 光电开关 制造公差 干涉仪 公差分析 基础 马赫 控制 Crosstalk Fits and tolerances Integrated optics Interferometers Semiconducting aluminum compounds Switching functions Weighing
  • 相关文献

参考文献11

  • 1W. Wang, E. B. Li, C. L. Zhang, P. Lv and C. X. Tang, J. Optoelectron. Laser 19, 1571 (2008). (in Chinese).
  • 2J. X. Pan, Y. Gao, Y. Li, Y. L. Hao, X. H. Li, X. Q. Jiang, M. H. Wang and J. Y. Yang, J. Optoelectron. Laser 19, 1587 (2008). (in Chinese).
  • 3Z. Jin and G. D. Peng, Opt. Commun. 241,299 (2004).
  • 4X. Yan, C. S. Ma, C. T. Zheng, X. Y. Wang and D. M. Zhang, Optoelectron. Lett. 5, 0081 (2009).
  • 5C. T. Zheng, C. S. Ma, X. Yan, X. Y. Wang and D. M. Zhang, Opt. Commun. 281, 5998 (2008).
  • 6C. T. Zheng, C. S. Ma, X. Yan, X. Y. Wang and D. M. Zhang, Appl. Phys. B: Lasers Opt. 98, 511 (2010).
  • 7Y. Enami, D. Mathine, C.T. DeRose, R. A. Norwood, J. Luo, A. K. Y. Jen and N. Peyghambarian, Appl. Phys. Lett. 91, 093505 (2007).
  • 8Y. Enami, C. T. DeRose, D. Mathine, C. Loychik, C. Greenlee, R. A. Norwood, T. D. Kim, J. Luo, Y. Tian, A. K. Y. Jen and N. Peyghambarian, Nature Photon 1, 180 (2007).
  • 9C. Pitois, C. Vukmirovic and A. Hult, Macromolecules 32, 2903 (1999).
  • 10W. G. Driscoll and W. Vaughan, Handbook of Optics, McGraw-Hill, New York, 7 (1978).

同被引文献7

引证文献2

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部