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Negative capacitance in doped bi-layer organic light-emitting devices 被引量:1

Negative capacitance in doped bi-layer organic light-emitting devices
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摘要 This paper reports that the doped bi-layer organic light-emitting devices are fabricated by doping in different regions of the light-emitting layer, the admittance and luminance spectra to characterize the capacitance and luminance of the device are measured. Negative capacitance (NC) appeared at low frequencies when the doped devices are biased with high voltages. The measured phase difference between AC voltage applied across the device and AC current flowing through the device show that the device is inductive when NC appears. This paper reports that the doped bi-layer organic light-emitting devices are fabricated by doping in different regions of the light-emitting layer, the admittance and luminance spectra to characterize the capacitance and luminance of the device are measured. Negative capacitance (NC) appeared at low frequencies when the doped devices are biased with high voltages. The measured phase difference between AC voltage applied across the device and AC current flowing through the device show that the device is inductive when NC appears.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第2期465-470,共6页 中国物理B(英文版)
基金 supported by the Natural Science Foundation of the Shanghai Committee of Science and Technology,China (GrantNo. 08JC1402300)
关键词 negative capacitance doping in different regions organic light-emitting device negative capacitance, doping in different regions, organic light-emitting device
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