摘要
硅压力传感器是利用半导体硅的压阻效应制成,其品质的优劣主要决定于敏感结构的设计与制作工艺.文章从硅压力传感器敏感薄膜的选择、敏感电阻条的确定以及敏感电阻位置的选取,设计了一种方案并进行了实验验证,得出所设计的压力传感器精度达到0.1%-0.25%F.S.
Silicon pressure sensor is made based on the piezoresistance effect of semiconductor.The advantages and shortcoming of the sensor is determined by the design and the workmanship of sensing structure.The choice of an elastic diaphragm and the optimal key location of the sensing resistor is discussed in the case.The dimension of the sensing resistor is determined.A scheme is experimental validation and the pressure transducer accuracy of sensor has reached to 0.10%-0.25%F.S.
出处
《吉林师范大学学报（自然科学版）》
2011年第1期133-136,共4页
Journal of Jilin Normal University:Natural Science Edition
基金
安徽省2010年科技计划项目(10080703003)
安徽省教育厅自然科学研究重点项目(KJ2008A059)
关键词
压阻式压力传感器
力敏电阻
芯片设计
piezoresistive pressure sensor
sensing resistor
chip design
