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基于RESURF理论的SOI LDMOS耐压模型研究(英文) 被引量：2

SOI LDMOS Withstand Model Based on RESURF Principle
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摘要 对SOI LDMOS器件的击穿电压进行了研究,建立了适用于该器件的RESURF耐压模型,获得了表面电势和电场分布解析表达式,给出了SOI LDMOS器件漂移区的最优浓度,在此基础上将该模型嵌入半导体工艺模拟以及器件模拟软件(Sen-taurus TCAD)中,并对SOI LDMOS器件的表面电场分布、击穿特性和I-V特性进行了仿真,得到的仿真结果验证了模型可以精确的表征SOI LDMOS器件的耐压。 We study the breakdown characteristics of SOI LDMOS device and present a withstand model based on RESURF principle for the device.The analytical expressions of surface potential and field distribution and the optimal concentration of drift region are obtained.Based on the research,we embed the model into the Sentaurus TCAD simulation software,and then simulate the surface electric field distribution,the breakdown characteristic and the I-V characteristic of SOI LDMOS device.The simulation results show that the proposed model performs can effectively describe the device.
作者 苗田乐 李文钧 王皇 郑伟 申屠旭丹 刘军 孙玲玲
机构地区 杭州电子科技大学微电子CAD研究所
出处 《电子器件》 CAS 2011年第1期17-20,共4页 Chinese Journal of Electron Devices
基金 国家自然科学基金资助(60806011)
关键词 SOI LDMOS 模型 RESURF TCAD SOI LDMOS MODEL RESURF TCAD
分类号 TN3 [电子电信—物理电子学]
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参考文献12

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同被引文献16

  • 1Shi Jinglin, Yong Zhong Xiong, Ammar Issaoun, et al. RF Noise Modeling of CMOS 90rim Device Using Enhanced BSIM4 with Additional Noise Source [C]//IEEE International Workshop on Radio-Frequency Integration Technology, 2007 : 206-209.
  • 2Wood John, Peter H, Daren Bridges, et al. A Nonlinear Electro- Thermal Scalable Model for High-Power RF LDMOS Transistors [J ]. IEEE Transistors on Micro Theory and Techniques, 2009,57(2):282-292.
  • 3Griffith E C, Power J A, Kelly S C, et al. Characterization and Modeling of LDMOS Transistors on a 0.6 μm CMOS Technology [C]//Microelectronic Test Structures, 2000. ICMTS 2000. Pro- ceedings of the 2000 International Conference. 2000 : 175-180.
  • 4Lee S, Yu H K. A New Extraction Method for BSIM3v3 Model Parameters of RF Silicon MOSFETs [J]. Microelectronia Test Structures Icmts Proceedings of the International Conference, 1999:95-98.
  • 5Lee S, Kim C S, Yu H K. A RF MOSFET SPICE Model with a New Substrate Network [C]//Radio and Wireless Conference, 2000. RAWCON. 2000:203 - 206.
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  • 7Kwon I, Je M, Lee K, et al. A Simple and Analytical Parameter- Extraction Method of a Microwave MOSFET [J]. IEEE Transac-tions on Microwave Theory & Techniques, 2002, 50 (6) : 1503- 1509.
  • 8Wood J, Lamey D, Guyonnet M, et al. An Extrinsic Component Parameter Extraction Method for High Power RF LDMOS Tran- sistors [C ]//IEEE MTT-S International Microwave Symposium Digest. IEEE MTT-S International Microwave Symposium. 2008 : 607 -610.
  • 9谢姝,曹娜,郑国祥,龚大卫.包含负阻效应的高压LDMOS子电路模型[J].复旦学报（自然科学版）,2008,47(1):21-25. 被引量：2
  • 10王靖琳,钱钦松,孙伟锋.高压SOI PLDMOS的寄生双沟道特性分析及其改进结构[J].电子器件,2009,32(1):31-34. 被引量：2

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电子器件
2011年 第1期

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