摘要
采用0.25μm GaN HEMT制备工艺在AlGaN/GaN异质结材料上研制了高性能X波段GaN单片电路低噪声放大器。GaN低噪声单片电路采取两级微带线结构,10 V偏压下芯片在X波段范围内获得了低于2.2 dB的噪声系数,增益达到18 dB以上,耐受功率达到了27 dBm。在耐受功率测试中发现GaN低噪声HEMT器件存在一定的恢复效应,并进行了相应讨论。
A high performance GaN MMIC low noise amplifier based on 0.25 μm AlGaN/GaN HEMT technology on SiC substrate is presented operating in the X-band. A noise figure NF below 2.2 dB is measured from 8.5～10.5 GHz under 10V.And a linear gain G of the MMIC higher than 18 dB is also measured.The survivability of the LNA is assessed by the stress-tests,in the input up to 27 dBm for 10 min.During the stress-tests,a recovering effect of the GaN low noise HEMT is observed.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2011年第1期16-19,共4页
Research & Progress of SSE
