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0.18μm浮栅Flash存储器件的总剂量辐射效应试验研究

Experimental Study on Irradiation Effects in 0.18 μm Floating Flash Memories
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摘要 针对自主设计的4 Mbit基于0.18μm商用CMOS flash工艺的浮栅flash存储器件进行了钴-60γ射线辐射效应试验研究。该存储器为FPGA的配置存储器。通过对被测器件分组,在加电配置和未加电配置条件下分别进行了钴-60γ射线辐射效应试验。试验实时监测了被测器件的工作电流以及其配置FPGA功能随总剂量变化的特性,在国内首次测试了该工艺尺寸的flash存储器件的总剂量辐射效应特性。得到了其工作电流漂移的总剂量阈值为45 krad(Si)和功能失效总剂量阈值为92 krad(Si)的试验结果。 This paper reports the Co-60 radiation test results of 4-megabit 0.18 μm flash memory under biased and unbiased conditions.The flash memory is designed for configuration of FPGAs.The change of the supply current and the functional failure states in respect to the total ionizing dose（TID） are obtained respectively.The supply current is observed increase at a total dose threshold of 45 krad（Si）,and functional failures occure at a total dose threshold of 92 krad（Si）.
作者 范雪 李平 谢小东 李辉 杨志明 丛伟林
机构地区 电子科技大学微电子与固体电子学院电子薄膜与集成器件国家重点实验室 成都华微电子科技有限公司
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2011年第1期44-47,共4页 Research & Progress of SSE
关键词 浮栅flash存储器件 总剂量效应 射线 floating gate flash memories total ionizing dose（TID） effect γ-ray
分类号 TN43 [电子电信—微电子学与固体电子学]
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参考文献19

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共引文献15

固体电子学研究与进展
2011年 第1期

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