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异质栅单Halo沟道SOI中隐埋层对器件特性的影响

Impact of Buried Oxide Layer on Characteristics of Dual Material Gate SOI MOSFETs with Single Halo
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摘要 研究异质栅单Halo沟道SOI MOS器件的隐埋层中二维效应对器件特性,如电势分布、阈值电压等的影响,仿真结果表明,隐埋层中的二维效应会引起更明显的SCE及DIBL效应。在考虑隐埋层二维效应的基础上,提出了一个新的二维阈值电压模型,能较好地吻合二维器件数值模拟软件Medici的仿真结果。 In this paper,the study of the impact of the two-dimensional effects in a buried oxide layer on device characteristics is presented,such as potential distribution,and threshold voltage.The simulation results indicate that the short-channel effect and drain-induced barrier lowering effect become more serious due to the two-dimensional effect.With taking the two-dimensional effect in a buried oxide layer into account,a novel two-dimensional analytical model is proposed,and the calculated results are in good agreement with those from two-dimensional device simulator of Medici.
作者 黄玮 钟传杰
机构地区 江南大学信息工程学院
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2011年第1期48-52,共5页 Research & Progress of SSE
关键词 异质栅 单Halo 绝缘体上的硅 二维效应 阈值电压 dual material gate single halo SOI two-dimension effect threshold voltage
分类号 TN386 [电子电信—物理电子学]
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参考文献11

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固体电子学研究与进展
2011年 第1期

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