摘要
根据对器件散热特性的分析,提出用特定脉宽的瞬态热阻抗表征器件的稳态散热特性。测量了特定器件热阻与温度的依赖关系,建议在实际工作中注意器件热阻并不为常数的客观事实。提出应力试验前后测量器件热阻可有效控制器件的某些制造缺陷。
Based on analyzing the heat conduction characteristic of the devices,this paper suggests that the steady-state thermal performance of the semiconductor devices can be characterized by using transient thermal impedance under a specific pulse width.The temperature dependent performance of the thermal resistance of some microwave devices is measured.It is noted that the thermal resistance is not a constant when evaluating a device.The test results show that some manufactured defect of devices can be discoverd and controlled by measure the thermal resistance of devices before and after the stress tests.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2011年第1期53-55,共3页
Research & Progress of SSE
关键词
半导体器件
热特性
稳态热阻
瞬态热阻抗
semiconductor device
thermal performance
steady-state thermal resistance
transient thermal impedance