P波段450W硅LDMOS脉冲功率器件的研制

Research and Development of P Band 450 W Pulse Power Silicon LDMOS

报道了P波段450 W硅LDMOS器件的研制结果。所研制器件采用沟槽技术实现背面源结构,采用场板技术提高击穿电压并降低栅漏电容,采用多晶硅金属硅化物结构降低栅阻。研制结果表明,在漏源工作电压36 V,脉宽20 ms,占空比35.7%的测试条件下,485～606 MHz全带内输出功率达到450 W,增益大于18 dB,效率大于60%。

A research and development results of P band 450 W pulse power silicon LDMOS are reported.By using trenched-sinker technology to realize backside source,field plate technology to raise drain-source breakdown voltage and reduce feedback capacitance,polysilicon and silicide complex structure to reduce gate resistance,the measured results show that the developed device can deliver 450 W output power over a 485～606 MHz band at 20 ms pluse width,35.7% duty cycle,36V operate voltage,with more than 18 dB power gain and 60% drain efficiency.