B(C_2H_5)_3等离子辅助渗硼的研究

Study on the Boriding of B(C2H5)3 by PACVD

对新型渗硼剂Ｂ（Ｃ２Ｈ５）３的渗硼工艺进行了研究。结果表明：在正常渗硼工艺条件下，基体表面没有形成连续致密的渗硼层，而是形成了一层数μｍ厚的硼碳层；在间歇渗硼工艺条件下，基体表面形成了一层致密的渗硼层，这是因为通过溅射消除了在渗硼过程中沉积在基体表面的硼碳层。

The boriding process of B(C2H5)3 by PACVD has been investigated.It is shown that there is no boride layer on the substrate but a few m BClayer in normal boriding process.Under interrupted boriding process conditions,the boride layer can be obtained.This is because that the BC layer has been removed by sputtering and then boron atoms can diffuse into the substrate.