双槽栅SOI LDMOS器件结构及其制造方法研究

Device Structure and Fabricating Method for SOI LDMOS with Double Trench Gates and Plates

提出了一种具有双槽栅(DTG)SOI LDMOS新结构及其制造方法。与单槽栅(STG)SOI LDMOS相比,DTG SOI LDMOS具有更高的击穿电压,更低的通态电阻,更高的跨导。通过Silvaco TCAD对该结构进行了工艺仿真和器件电学特性模拟,结果表明DTG SOI LDMOS器件不仅具有较好的电学性能,而且可以采用SOI CMOS工艺制造。

A novel SOI LDMOS with Double Trench Gate （DTG） and its fabrication method were proposed in turn. DTG SOl LDMOS has advantages of higher breakdown voltage,lower on-resistance,higher transconductance over Single Trench Gate （STG） SOI LDMOS. Simulated results on process and electrical characteristics obtained with Silvaeo TCAD indicate that the proposed DTG SOl LDMOS cell not only has better electrical characteristics,but also is feasible to be fabricated in SOl CMOS technologies.