Zn_(0.8)Na_(0.1)Co_(0.1)O薄膜的制备及衬底温度对其影响

Fabrication of Zn_(0.8)Na_(0.1)Co_(0.1)O thin films and the substrate temperature influence

采用脉冲激光沉积(PLD)技术,在温度为400、500和600℃的SiO2衬底上成功制备出Zn0.8Na0.1Co0.1O薄膜。用X射线衍射(XRD)、原子力显微镜(AFM)、荧光光谱仪、四探针电阻率测试台等对薄膜的结构、表面形貌和光电性质进行了表征,讨论了不同衬底温度对薄膜结构、光学和电学性质的影响。结果表明:掺杂没有改变ZnO的六角纤锌矿结构;表面较平坦;薄膜只有较强的紫外发射且较本征ZnO出现红移;薄膜呈现低电阻率的特性。当衬底温度为600℃时,薄膜的结晶质量最好,紫外发射最强;衬底温度为400℃时,薄膜电阻率最低,达到了7.55×10-1Ω.cm。讨论了上述结果产生的原因。

Zn 0.8 Na 0.1 Co 0.1 O thin films were prepared by the pulsed laser deposition（PLD） on SiO 2 substrates at different substrate temperatures（400 ℃,500 ℃,600 ℃）.The Xray diffraction（XRD）,the atomic force microscopy（AFM）,the fluorescence spectrometer and the four-probe tester were applied to characterize the structure,optical and electrical properties of the films,respectively.The effects of substrate temperature on the structure,optical and electrical properties of Zn 0.8 Na 0.1 Co 0.1 O thin films were discussed.The results indicate that the films are still the zincite structure,they have a strong ultraviolet（UV） emission,and the doping leads to the UV emission peak red-shift.The films exhibit low resistivity.When the substrate temperature is 600 ℃,the films have the best crystalline quality and the UV emission is the strongest.When the substrate temperature is 400 ℃,the lowest resistivity of 7.55×10-1 Ω·cm is obtained.The reasons for the phenomena mentioned above were deeply discussed.