摘要
本文工作利用脉冲激光沉积术(PLD)和超高真空扫描隧道显微术(UHV-STM),研究了在Sr/Si(001)-(2×1)衬底表面上真空室温沉积几个单层SrTiO3薄膜的初始生长过程.经660℃退火处理后,Sr/Si衬底表面上形成了纳米岛状结构.经分析,这些纳米小岛为C49-TiSi2和C54-TiSi2.实验结果表明,在没有氧气的情况下退火,Sr/Si界面无法有效阻止SrTiO3薄膜与Si衬底之间的相互作用.
SrTiO3 ultra-thin film was deposited on the Sr /Si （ 001 ） surface using pulsed laser deposition （ PLD ） at room temperature and studied using scanning tunneling microscopy （STM）. After annealing at 660 ℃ for about 60 minutes in ultrahigh vacuum （UHV）,nanosize islands were formed on the Sr /Si（001） surface. High resolution STM images and dI / dV mapping of islands on Sr /Si（001） were obtained. The islands can be attributed to TiSi2 islands with C49 and C54 structures. The existence of Sr on Si is not sufficient to prevent the reaction between Si and Ti in preparation of ultra-thin SrTiO3 films.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2011年第3期494-502,共9页
Acta Physica Sinica
基金
国家自然科学基金(批准号:60771006)资助的课题~~
