氮离子注入CVD金刚石薄膜的场电子发射研究

Field Electron Emission from N Implanted CVD Diamond Film

对氮离子注入掺杂的微波等离子ＣＶＤ金刚石薄膜进行了场电子发射研究。结果表明，发射具有３阶段特征，即当样品损伤层被击穿、发射体被激活后，稳定的发射建立起来，并表现出优异的发射性能，开启电压低（４５Ｖ），发射电流大（１３０ｍＡ）。

The field electron emission from N-doped diamond film by implantation has been investigated.The measurement result shows that the film has an excellent emission characteristics,i.e. low turn-on voltage of 45V and large emission current of 25mA.A simply discussion has also been given for the illustration of the phenomena.