一种多胞微波GaAs MESFET制作技术及其沟道电流模型

Processing Technology for a 5 Watt C Band Multi Cell Microwave GaAs MESFET and Its I ds Modeling

介绍了单管 ５ Ｗ 大栅宽多胞微波砷化镓 Ｍ Ｅ Ｓ Ｆ Ｅ Ｔ 器件的优化设计、关键工艺技术的创新、器件特性测试等，特别是器件具有高反向击穿电压和耐大电流的特性，并结合器件结构特点和 Ｉ Ｖ 特性，建立了该器件的改进型沟道电流非线性模型，最后与实验测试数据比较，其拟合度优于常规模型的拟合度。

A single GaAs MESFET with 5 watt large gate width multi cell structure is dealt with, in terms of its optimal design, key processing renovation and device performance test, etc. In particular, its characteristics of high breakdown voltage and over current capacity is described. In the light of the unique device structure and its I V characteristics, a modified I ds nonlinear model for the typical GaAs MESFET is put forward. Finally, a comparison of experimental data shows that agreement with the experiment using this typical model is far better than directly empoying the common models.