摘要
半导体放电管是新一代抗浪涌保护器件，抗浪涌能力是其最重要的特性参数之一。文中分析了浪涌条件下器件失效的高温物理机制，讨论了器件功耗与传热对抗浪涌能力的影响，指出采用多元胞结构可降低由热量集中造成的最高结温，从而提高了器件的抗浪涌能力。
Semiconductor arrester is a new type of transient voltage suppressor. Surge handling capability is one of the most important characteristics of the device. High temperature physical effects underlying the failure mechanism of the device under surge conditions are analyzed. Effects of power dissipation and thermal transfer on the surge handling capability have been studied. It is proposed that a multi cell device can reduce the maximum temperature caused by heat concentration, thus improving the surge handling capability of the device.
出处
《微电子学》
CAS
CSCD
北大核心
1999年第4期278-281,共4页
Microelectronics
关键词
半导体放电管
保护器件
抗浪涌能力
Protective device
Semiconductor arrester
Surge handling capability
