摘要
利用太赫兹时域光谱技术测量了掺硫硒化镓(GaSe1-xSx)晶体在太赫兹波段的光学参数,包括折射系数、吸收系数等。使用自由空间电光取样法获得了太赫兹电磁波的脉冲波形,对不同硫掺杂量的硒化镓晶体进行了研究,在硫的掺杂量为0,0.01,0.14,0.26,0.37时,在0.22.0 THz测得了GaSe1-xSx的折射系数、吸收系数等光学参数。此外还在吸收光谱上观察到E′^(2)和E″^(2)两个声子振动模态,其强度与频率会随着硫的掺杂量而改变,且即使是微量的硫掺杂也会影响吸收光谱上的声子振动模态。最后,在相位匹配ee-e的条件下,模拟了利用锁模钛蓝宝石激光使此类晶体产生太赫兹辐射的可能性。
The frequency-dependent optical constants of GaSe∶S crystals,refractive indexes,and obsorption conficients,were measured by using the terahertz time-domain spectroscopy.By the temporal-profile measurements of the terahertz pulse,the ordinary refractive index and absorption coefficients of GaSe1-xSx(x=0,0.01,0.14,0.26,0.37) crystals in the range of 0.2-2.0 THz were obtained directly.The vibration modes of two phonons(E′^(2) and E″^(2)) on the absorption spectra were measured,in which their intensities and frequencies change with the doped amounts of sulfur.Furthermore,for the first time to our knowledge,the possibility of ee-e down-conversion in the THz range was demonstrated by a simulation.
出处
《光学精密工程》
EI
CAS
CSCD
北大核心
2011年第2期354-359,共6页
Optics and Precision Engineering
基金
国际合作计划资助项目(No.NSC96-2923-M-009-001-MY3)
关键词
掺硫硒化镓晶体
太赫兹辐射
太赫兹时域光谱
sulfur-doped GaSe crystals
THz radiation
terahertz time-domain spectroscopy