摘要
在KCl-NaCl-NaF-SiO2熔盐体系中,以铂丝为参比电极、研究电极,高纯石墨坩埚为辅助电极,采用循环伏安法和计时电流法对硅离子的结晶机理进行了研究。结果表明:该体系中硅的电结晶过程符合扩散步骤控制的半球形三维晶核连续长大成核机理;增大过电位可使晶核密度增加,有利于获得较好的沉积硅层。
Pt as reference and reseach electrode,high pure graphite crucible as assistant electrode,the crystallization mechanism of Si ion on Pt electrode was investigated in KCl-NaCl-NaF-SiO2 molten salt by using cyclic voltammetry and chronoamperometry.The results indicated that process of Si crystallization was hemispheric tridimensional crystal nucleus and continuous growing procedure;the density of crystal nucleus could be increased and good sedimentary formation could be obtained if excessive potential was properly increased.
出处
《有色金属（冶炼部分）》
CAS
北大核心
2011年第3期16-18,共3页
Nonferrous Metals（Extractive Metallurgy)
基金
国家自然科学基金资助项目(50674039)
