红外焦平面硅基通孔加工及电极互连技术

IFPA processing of through-hole electrode interconnection on silicon

通过硅通孔技术实现红外焦平面电极垂直互连,提高像元占空比,缩短了互连引线长度,降低了信号延迟。用单晶硅湿法刻蚀方法形成通孔,利用直写技术将耐高温Ag-Pd导体浆料填充通孔,实现红外焦平面阵列底电极与硅基片背面倒装焊凸点互连。

In this work, we put forward an argument that vertical interconnection could be realized by making use of the technique of through-silicon-via （TSV） to enhance the duty, shorten the interconnecting metallic line and reduce the signal delay time. A through-hole is formed by silicon wet etching method, and then filled with high-temperature-resisting Ag-Pd conductive paste through use of direct writing technology, so as to realize the interconnection between the bottom electrode of infrared focal plane array and the flip chip bonding bump at the back side of silicon substrate.