多组分掺杂ZnO陶瓷薄膜的射频磁控溅射法制备及表征

Preparation and characterization of(Bi,Sb,Co,Cr,Mn)-doped ZnO ceramic films grown by the RF magnetron sputtering

采用传统陶瓷烧结工艺,制备了直径为50mm,厚度为3mm的Bi2O3、Sb2O3、Co2O3、Cr2O3、MnO2掺杂的ZnO陶瓷靶,采用所制备的ZnO陶瓷靶和射频磁控溅射技术在Si(111)衬底上成功制备出了ZnO陶瓷薄膜,并研究了溅射功率和退火温度对ZnO陶瓷薄膜的微观结构和表面形貌的影响。结果表明:随着溅射功率的增大,ZnO陶瓷薄膜的沉积速率增大;颗粒尺寸先减小后增大。随着退火温度的升高,ZnO陶瓷薄膜的c轴取向增强;晶粒尺寸增大。溅射功率为350W,退火温度为850℃,制备出的陶瓷薄膜的相组成是ZnO主晶相、富Bi2O3相、Sb2O3相以及Zn2.33Sb0.67O4尖晶石相,得到了具有压敏电阻特性的组织结构。

（Bi,Sb,Co,Cr,Mn）-doped ZnO ceramic targets with 50mm in diameter and 3mm in depth were prepared by the traditional solid-state sintering process.ZnO ceramic films were deposited on Si（111） substrate by RF magnetron sputtering using（Bi,Sb,Co,Cr,Mn）-doped ZnO ceramic target.The effects of both sputtering power and annealing temperature on the microstructure and surface morphology of ZnO films were investigated.The results show that with the increase of the sputtering power,the growth rate of the ZnO ceramic films tends to increase and the grain size first decreases and then increases.With the increase of the annealing temperature,the c-axis（002） orientation is enhanced,and the grain size tends to increase.It is found that when the sputtering power is 350W and the annealing temperature is 850℃,the ZnO ceramic films are the same phase composition as the ZnO ceramic target composed of ZnO main phase,Bi2O3 phase,Sb2O3 phase and Zn2.33Sb0.67O4 spinel phase.It is indicated that the ZnO ceramic films have had the microstructure that is the basic of varistor.