Ce^(3+)注入掺杂金刚石薄膜蓝区电致发光研究

Blue Electroluminescence from Ce^(3+) Ion Implant Doped Diamond Thin Films

采用微波等离子体化学气相沉积设备在高掺杂硅衬底上沉积了一层金刚石薄膜,然后采用离子注入法在金刚石薄膜中注入不同剂量的Ce3+,从而制备出了Ce3+掺杂的金刚石薄膜。研究了其电致发光特性,得到了发光主峰位于蓝区(476 nm和435 nm处)的光发射。实验中发现随着Ce3+注入剂量的增加,电致发光强度也随之增加。

Ce^3＋ ion implant doped diamond thin films are made by using chemical vapour deposition system and ion implant system.Their electroluminescence（EL） characteristic has been investigated.The experimental results indicate that the EL spectrum shows the main peak centered at 476 nm,and the other weaker peak at 435 nm（belong to blue light emission）.The intensity of EL increases obviously with Ce^3＋ ion implant.