高效率GaAsP/AlGaAs张应变量子阱激光二极管

High Efficiency Diode Lasers with GaAsP/AlGaAs Tensile Strained Quantum Wells

从理论上设计优化了高效率808nm GaAsP/AlGaAs张应变量子阱激光二极管外延材料的量子阱结构和波导结构参数,并采用低压金属有机气相外延技术实验制备了外延材料。将制作的芯片解理成不同腔长,测试得到外延材料的内损耗系数和内量子效率分别为0.82cm-1和93.6%。把腔长为900μm的单巴条芯片封装在热传导热沉上,器件在准连续工作条件下最大电光效率达到60.5%,相应的斜率效率和输出光功率分别为1.28W/A和74.9W。器件测试结果表明,采用优化的GaAsP/AlGaAs张应变量子阱和宽波导结构,可以有效提高器件的电光效率。

Quantum well（QW） and waveguide structures of the epitaxy material for high power 808 nm diode lasers with GaAsP/AlGaAs tensile strained QW were designed and optimized in theory,and the epitaxy material was fabricated by metal organic chemical vapor deposition（MOCVD）technology.Cleaving the processed wafer into laser chips with different cavity lengthes,the measured internal loss coefficient and internal quantum efficiency are 0.82 cm-1 and 93.6%,respectively.The laser bar with cavity length of 900 μm was mounted on the conductive heatsink.The maximal electro-optical conversion efficiency is 60.5% under quasi-conti-nuous working condition,and the corresponding slope efficiency and output power are 1.28 W/A and 74.9 W,respectively.The measured results show that the conversion efficiency can be effectively enhanced by optimizing the structures of GaAsP/AlGaAs tensile strained QW and broad waveguide.