摘要
本文研究了氮生长掺杂和离子注入掺杂金刚石薄膜的场电子发射性能．测试结果表明，两类样品均显示良好的发射性能，即开启电压低（５０～１５０Ｖ）、发射电流大（６～３０ｍ Ａ），但它们有不同的发射行为：注入掺杂样品存在发射电流的饱和与滞后、开启电压的前移现象，而生长掺杂样品的发射符合Ｆｏｗ ｌｅｒ－Ｎｏｒｄｈｅｉｍ 理论．实验还得到了用于生长场发射阴极薄膜的最佳掺杂氮碳流量比为～４２％ ．
The field electron emission of N\|doped diamond films prepared by microwave plasma\|CVD with in situ growth doping and ex situ implantation doping has been investigated.It is shown that both the N\|doped diamond films have good emission characteristics:low turn\|on voltage (50~150V) and large emitting current (6~30mA).However,their emitting behaviors are different.A primary discussion has been given for the explanation of these phenomena.
基金
国家自然科学基金
教育部优秀青年教师基金
