摘要
本文介绍用ＣＶＤ法在铜的基底上合成金刚石薄膜，并获得金刚石－铜复合材料的方法，测量了金钢石－铜复合薄膜电阻与温度的关系．得到了类金刚石薄膜的能隙宽度为０．７～２．５ｅＶ，多晶金刚石薄膜的禁带宽度为２．６～３．１ｅＶ。
The diamond film on copper substrate is obtained by CVD\|method.The relationship between the electric resistance of diamond\|copper composite film and the temperature has been researched.The band gap of the diamond like film varies from 0 7eV to 2 5eV.That of polycrystalline diamond film is in the range of 2 6～3 1eV.The thermal conductivity of diamond\|copper bilayer materials is twice as big as that of pure copper.
