电沉积Pt微岛对单晶n-Si光阳极行为的影响

EFFECT OF ELECTRODEPOSITED Pt MICROISLANDS ON THE BEHAVIOUR OF n-Si PHOTOANODE

用电沉积法在n-Si单晶表面上制得微细的不连续Pt岛,测得最佳的电沉积条件与最适当的氧化还原偶。在63mW/cm^2白光照射下,I_(sc)为21mA/cm^2,V_(oc)为0.57伏,转换效率达12.1％。 用SEM、XPS及AES测量n-Si/Pt电极表面。对实验结果进行了详细讨论。

In this paper, the microscopic discontinuous Pt overlayer on the surface of n-Si single crystal has been obtained by electrodeposition method; the optimium deposition condition and the appropriate redox couple have also been detected. Under the illumination of 63mW/cm2 white light, Isc = 21mA/cm2; Voc = 0.57V.. the conversion efficiency reaches 12. 1%.The surface of n-Si/Pt has been determined by SEM, XPS and AES. The experimental results have been discussed in detail.