CdS/CuInSe_2异质结薄膜太阳电池

THIN-FILM HETEROJUNCTION CdS/CulnSe2 SOLAR CELL

用蒸发方法制备CdS/CuInSe_2(CdS/CIS)异质结薄膜太阳电池。在Mo/玻璃或Mo/Al_2O_3衬底上,用双源法蒸发CIS多晶材料+Cu或CIS多晶材料+Se,通过控制对黄铜矿结构的微小偏离,淀积电阻率不同的两层p-CIS层,然后用蒸发CdS方法,通过控制In的蒸发,在高阻p-CIS层上淀积两层电阻率不同的n-CdS层,并在低阻n-CdS层上蒸发Al栅和SiOx减反射膜,构成n-CdS/p-CIS异质结薄膜太阳电池。对电池的I—V特性和光谱响应特性进行了研究。

Polycrystalline thin-film heterojunction CdS/CuInSe2 solar cells have been prepared on the substrate of Mo/GG17-glass or Mo/Al2O3 by co-deposition in vacuum. Two p-ty-pe CuInSe2 layer with different resistivity were deposited on the Mo layer by evaporating poly-material CuInSe2 and Cu or poly-material CuInSe2 and Se. The resistivity of the film was controlled by small departure for a single phase chalcopyrite. Two N-type CdS layers were subsequently deposited on the CuInSe2 film of the high resistivity by evaporating CdS powder which had been presinterod. The CdS film of high-resistivity was deposited by undoped material and the low-resistivity was deposited with indium. For cells, an aluminum film grid was deposited on top -of the low-resistivity CdS film, and then an antireflection coat was coatetl on it by a vacuum deposited SiOx film. A solar cell efficiency of 8.596 under simulated AM1.5 illumination is reported for this structure. The I-V characterization and spectral responses of the cell are described.