Pb(TiSn)O_3掺杂及烧结温度对BaTiO_3系统介电性能的影响

Effect of Pb(TiSn)O_3 Doping and Sintering Temperature on the Dielectric Properties of BaTiO_3 Dielectric Material

对Pb(TiSn)O3掺杂及烧结温度对BaTiO3陶瓷的微观结构和介电性能的影响进行了研究。研究表明,在BaTiO3陶瓷中添加Pb(TiSn)O3,产生细晶效应使介电常数增大,同时居里温度升高到到150℃,电容量变化率特性改善。XRD分析表明,四方率随烧结温度的提高而减小,有助于电容量变化率特性的改善。本实验获得了满足X8R特性的瓷料系统,掺杂0.9mol%Pb(TiSn)O3的BaTiO3陶瓷在1180℃烧结6小时的介电性能如下:介电常数ε25℃>1500,介电损耗tanδ<1.8%,-55℃～180℃范围内最大电容量变化率≤±15%。

The effects of Pb（TiSn）O3 doping and sintering temperature on the microstructure and dielectric properties of BaTiO3 ceramics was investigated.It was observed that the BaTiO 3 ceramics doped with Pb（TiSn）O3 can form core-shell-structured fine grains and dielectric constant increases.The Curie temperature of the ceramics moves higher to 150 ℃,and the temperature coefficiency characteristics is improved.The XRD analysis shows that when the ceramics are sintered at higher temperature,the decrease of the tetragonality results from the improvement of the temperature coefficiency characteristics.The X8R dielectric materials can be sintered at 1180 ℃ for 6h by doping 0.9mol%Pb（TiSn）O3 additives into the BaTiO3 ceramics,and its excellent dielectric properties are achieved,i.e.ε 25℃1500,tanδ1.8% and ΔC/C25℃（-55 ℃ ～180 ℃）≤ 15%.