电化学法制备p型Cu_2O半导体薄膜及其性能的表征

Electrochemical Deposition and Characterization of Properties of p-Type Cu_2O Film

采用电化学沉积方法在铟锡氧化物(ITO)导电玻璃上沉积出Cu2O薄膜的基础上,研究了络合剂种类、沉积电位和溶液pH值对Cu2O薄膜结构和性能的影响.结果表明:在以乳酸为络合剂的电解液中沉积出的Cu2O薄膜的晶粒尺寸比以三乙醇胺为络合剂的电解液中沉积出的薄膜晶粒尺寸大,结晶度好,致密度更高;在含有乳酸络合剂的溶液中,随沉积电位的提高,薄膜成核密度增大,晶粒尺寸减小,致密度提高;随pH值增加,制备的薄膜晶向由沿(200)取向变为沿(111)取向.经Mott-Schottky曲线和紫外-可见光透射光谱计算表明,所获得的Cu2O薄膜具有p型半导体性能,禁带宽度为1.93eV.

The cuprous oxide（Cu2O） films were electrochemically deposited on ITO substrates.The effects of coordination reagents,deposition potentials and pH values on the structure and properties of Cu2O were examined.The results show that Cu2O films deposited from the electrolyte with lactic acid as the coordination reagent have larger grain size,better crystallinity and higher density,compared with those deposited from the electrolyte with TEA as the coordination reagent.Moreover,in the presence of lactic acid,the nucleation density increases,the grain size decreases and the density rises with an increase in the deposition potential.The preferential orientation of the deposited films changes from（200） to（111） as the pH value rises.In addition,Mott-Schottky plot and the optical transimittance spectrum show that this prepared Cu2O film is a p-type semiconductor with a bandgap energy of 1.93 eV.