摘要
A novel approach for the fabrication of a metal oxide semiconductor（MOS） structure was reported.The process comprises electrochemical deposition of aluminum and zinc layers on a base of nickel-chromium alloy. This two-layer structure was thermally oxidized at 400℃for 40 min to produce thin layers of aluminum oxide as an insulator and zinc oxide as a semiconductor on a metallic substrate.Using deposition parameters,device dimensions and SEM micrographs of the layers,the device parameters were calculated.The resultant MOS structure was characterized by a C-V curve method.From this curve,the device maximum capacitance and threshold voltage were estimated to be about 0.74 nF and -2.9 V,respectively,which are in the order of model-based calculations.
A novel approach for the fabrication of a metal oxide semiconductor（MOS） structure was reported.The process comprises electrochemical deposition of aluminum and zinc layers on a base of nickel-chromium alloy. This two-layer structure was thermally oxidized at 400℃for 40 min to produce thin layers of aluminum oxide as an insulator and zinc oxide as a semiconductor on a metallic substrate.Using deposition parameters,device dimensions and SEM micrographs of the layers,the device parameters were calculated.The resultant MOS structure was characterized by a C-V curve method.From this curve,the device maximum capacitance and threshold voltage were estimated to be about 0.74 nF and -2.9 V,respectively,which are in the order of model-based calculations.
