溶胶凝胶法制备钼掺杂氧化锌薄膜及性质研究(英文)

Characterization of Mo-doped ZnO thin films prepared by sol-gel method

利用溶胶凝胶法在Al_2O_3衬底上制备出了c轴择优取向的钼掺杂氧化锌(MZO)透明导电薄膜,研究了,钼的掺杂量(0～1 at%)对钼掺杂氧化锌薄膜光电性能的影响。研究结果表明:所制备的薄膜为六方纤锌矿型结构且表面平整、致密。通过高温真空退火,MZO薄膜的电阻率明显降低。且随着钼含量的增加,MZO薄膜的电阻率呈现出先减小后增大的趋势,当钼含量为0.4at%时,获得最小电阻率为0.13Ωcm。薄膜在近红外区域(800～2000 nm)的平均透过率大于85%,这可以有效地拓宽光电器件的光谱范围。

Mo-doped ZnO（MZO） films with different Mo concentration（0～1at%） were prepared on Al_2O_3 （0001） substrates by sol-gel spin coating route.It was found that the MZO films with ZnO hexagonal wurtzite structure were highly c-axis orientation.The electrical properties of MZO films can be significantly improved by the heat-treatment in vacuum.The resistivity of the films initially decreases with the increase of Mo content and then gradually increases with a further increase of Mo content.The lowest resistivity of 0.13Ωcm was obtained at a Mo content of 0.4 at%.The carrier concentration and Hall mobility were measured and discussed to understand the electrical transport characteristics.The high average transmittance（85%） in near-infrared region（800～2000 nm） indicates the possible use of MZO films in photoelectric device can widen absorption spectrum range.