利用NPB/MoO_3/NPB作为空穴传输层的低驱动电压的有机发光器件

Low Driving Voltage in Organic Light-Emitting Diodes with NPB/MoO_3/NPB as a Hole Transport Layer

通过引入(NPB/MoO3)x/NPB作为空穴传输层,获得了低驱动电压的有机电致发光器件(OLEDs),(NPB/MoO3)x为多层结构(x为0,1和2)。通过对比发现,在相同亮度下,x=1对应的器件具有最低的工作电压。这是由于在NPB和MoO3之间产生了电荷转移复合物(charge transfer,CT),这将会降低器件的空穴注入势垒,从而降低其工作电压。文中所研究器件为基于8-羟基喹啉铝(tris(8-hydroxyquino-line)aluminum,Alq3)的绿光器件。与x=0时的普通器件相比,在亮度为1 000 cd.m-2时,x=1时的工作电压降低了0.8 V。

Driving voltage of organic light-emitting diodes（OLEDs） was lowered by applying（NPB/MoO3）x/NPB as a hole transport layer（HTL）.（NPB/MoO3）x was multi-layer periodic（MLP） structure with x changed from 0 to 3.Compared with the conventional device with 0-periodic structure,the driving voltage of the device with 1-periodic structure was the lowest.This was due to charge transfer（CT） complex formation between NPB and MoO3.The driving voltage of tris（8-hydroxyquinoline） aluminum（Alq3）-based organic light-emitting devices（OLEDs） could be lowered by 0.8 V at 1 000 cd·m-2 by using multiple structure of NPB/MoO3/NPB.