摘要
以Sr（OOCCH3）2·H2O,In（NO3）3.41/2H2O及Ti（OC4H9）4为原料,用溶胶-凝胶工艺制备了SrInx-Ti1-xO3（SITO）薄膜。SITO凝胶薄膜经过575~725℃/60 min退火形成立方钙钛矿结构。用XRD、SEM对薄膜结构和形貌表征。霍尔测定表明In-STO薄膜属于空穴导电的p-型半导体。SITO薄膜形貌与溶胶的陈化时间有关,最佳陈化时间为5~20 h。
Homogeneous,crack-free SrInxTi1-xO3（SITO） films on/SiO2 /Si（110） substrates were successfully fabricated by a sol-gel process.Sr（OAc）2 glacial acetic acid solution,being reacted withC3H5（OH）3,formed Sr（OAc）2[C3H5（OH）3]x;Ti（OBu）4 molecule,being partially exchanged withAcAc,and formed Ti（OAc）2（AcAc）2;while In（NO3）3·41/2H2O needs being changed into In（AcAc）2（OAc）2 by exchanging ligand in glacial acetic acid under anhydrous medium.All the species,undergoing partially hydrolyzed and polymerized by hydroxyl or oxygen,formed SITO polymeric sol.SITO films with cubic perovskite were subsequently formed after being annealed at 575～725 ℃ for 60 min.XRD、SEM were used for the structural and morphological characterization,the Hall measurement confirmed that the films are p-type semiconductor.
出处
《绝缘材料》
CAS
北大核心
2011年第1期17-21,共5页
Insulating Materials
基金
航天支撑基金(2009613305)
