基于物理机理分析的D波段耿氏振荡器

D-Band gunn oscillator based on physical mechanisms

耿氏二极管振荡器在毫米波系统中发挥着非常重要作用,因为其具有较低的相位噪声、结构更为简单等优点而得到较为广泛的应用,可为高频测试仪器提供本振源。通过半导体知识和相关数学物理方法,根据泊松方程和电流的连续性,找到了耿氏管工作偏压和器件管间电流的相应关系,对耿氏体效应二极管的内部物理机理及工作方式进行深入的量化分析,最终总结出基本砷化镓耿氏管的非线性电路的趋势模型。此非线性电路模型可以反映器件管芯内部的工作状态及其物理机理,并利用ADS软件仿真得到其谐波的输出频谱,在仿真中还得到了工作偏压和输出功率之间的关系。这些工作都对耿氏器件的理论模型进行了改进和相应完善,最后通过实验验证了模型的可行性。

Gunn oscillator plays an important role in millimeter system actually and it is widely used due to its advantages such as low noise and simple Structure. It can be used as a local oscillator of high frequency text equipment. According to the knowledge of semiconductor and mathematics, the relationship between the total current in the Gunn diode and driven voltage can be found in light of Poisson＇s equation and the continuity of total current, so can be physical mechanism and working modes of diode chip, which leads to establishment of nonlinear circuit of GaAs Gunn diode chip. This model interprets the nonlinear harmonic character of Gunn diode and the output spectrum is gotten by ADS as well as the relation between driven voltage and output power. All of the works we have done give some improvement to analyses of inner Gunn diode.