摘要
报道了分子束外延生长 Hg0.68 Cd0.32 Te 材料的光致发光测量结果。研究了原生样品和退火处理样品、以及氮离子注入样品的低温光致发光特征。对光致发光的测试结果进行拟合得到的禁带宽度, 与用红外透射谱得到的薄膜禁带宽相近; 其半峰宽和带尾能量较小, 显示了较高的薄膜质量。样品经过退火后带尾能量降低,
By using photoluminescences (PL), the molecular beam epitaxy (MBE) grown Hg 1-x Cd x Te (x=0.32) epilayers are studied. The PL measurement shows a strong near band edge emission peak with an FWHM of 5 meV and a small broadening energy, E 0(4.2 K)=1.3 meV, which indicates the high quanlity was obtained. Comparing the results of as grow and annealing sample shows that annealing sample has a better crystal quality than the as grow sample.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1999年第9期1284-1288,共5页
Acta Optica Sinica
关键词
薄膜
光致发光
分子束外延
汞镉碲
Hg 0.68 Cd 0.32 Te epilayer, photoluminescences, molecular beam epitaxy.