中子引起单粒子翻转过程的MonteCarlo计算模拟

MONTE CARLO SIMULATION OF THE PROCESS OF SINGLE EVENT UPSET INDUCED BY NEUTRONS

从中子与 硅原子相互 作用 的物 理机 理出 发，利 用 Ｍｏｎｔｅ Ｃａｒｌｏ 方 法编 制了 中子 引 起单 粒子 翻转的计算模拟 程序，并对１４ Ｍｅ Ｖ 中子环境 下的１６ Ｋ 位静 态存储器硅片翻 转过程中的物 理量进 行了计算，同时 可为中子引起的 单粒子翻转的 研究提供截面和 描述内部物理过 程的参考数据 。

Based on physical mechanism of the interaction between incident neutrons and silicon atoms, a simulation program of Single Event Upset (SEU) induced by neutrons is compiled by Monte Carlo method. The process of SEU of a 16 K static access memory silicon chip induced by 14 MeV incident neutrons has been simulated by the program. The simulation results show that the program can provide a detailed description of the physical process of SEU of a silicon chip and can produce reference data about SEU cross section in a 14 MeV neutrons evironment.