电沉积ZnO薄膜超声处理后结构和缺陷的研究

Study on Structure and Defect of ZnO Film Prepared by Electrodeposition and Ultrasonic post-treatment

以辛基酚聚氧乙烯(10)醚为有机添加剂,阴极电沉积制备了ZnO薄膜。经超声处理后,用X-射线衍射仪和光致发光光谱仪研究了ZnO薄膜的结构、应力状态和发光性能的变化。结果表明:样品的结晶性能变差,晶格内部的压应力变为张应力,于λ=395 nm处的激子发光峰和λ=580nm处的黄光发光峰强度比减小,同时发光谱中又出现了于λ=428 nm的蓝光峰。分析认为λ位于580 nm处的黄光发射是由VOZni复合缺陷与价带顶的跃迁引起的,而λ位于428 nm的蓝光发射则是由Zni与价带顶之间的跃迁引起。

ZnO film was prepared by cathodic electrodeposition in the presence of organic additive OP-10. After ultrasonic post treatment, the structure, stress state and photoluminescence properties of the ZnO fihn were studied by X-ray diffraction and photoluminescence spectrum. The results showed that the compress stress existed in the crystal lattice changed in to tensile stress, and strength ratio of emission peaks at 395 nm（UV） and 580 nm （yellow） decreased. In addition, a blue band centered at 428 nm appeared in the luminescence spectrum. It was believed that the yellow and the blue emissions were caused by transition to the valence band head level from levels of complex defect VoZni and Zni defect respectively.