摘要
Tio2(001) surface of rutile TiO2 single crystals was studied by surface photovoltage spectrum (SPS) and electrical field-induced surface photovoltage spectrum (EFISPS)techni(lue. The two SPS responses peak at 360 nm and 410 nm were identified as direct transition and indirect transition of TiO2(001) plane, respectively. And it was found that the indirect transition of TiO2 was very sensitive to the external electrical field. These results indicate that SPS and EFlSPS are effective means to study the opto-electrical characteristics ofsemico nd uctors.
Tio2(001) surface of rutile TiO2 single crystals was studied by surface photovoltage spectrum (SPS) and electrical field-induced surface photovoltage spectrum (EFISPS)techni(lue. The two SPS responses peak at 360 nm and 410 nm were identified as direct transition and indirect transition of TiO2(001) plane, respectively. And it was found that the indirect transition of TiO2 was very sensitive to the external electrical field. These results indicate that SPS and EFlSPS are effective means to study the opto-electrical characteristics ofsemico nd uctors.
出处
《高等学校化学学报》
SCIE
EI
CAS
CSCD
北大核心
1999年第9期1458-1459,共2页
Chemical Journal of Chinese Universities
基金
吉林省科技发展计划资助
关键词
二氧化钛
晶体
单晶
光伏响应
SPS
EFSPS
TiO_2 single crystals, Surface photovoltage spectroscopy, Electrical fleld-induced surface photovoltage spectroscopy
