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外延生长四方相Pb(Zr_(0.65)Ti_(0.35))O_3薄膜 被引量：1

Epitaxial Growth of Tetragonal Pb(Zr_(0.65)Ti_(0.35))O_3 Thin Films
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摘要 以SrRuO3(SRO)为缓冲层和底电极,利用射频溅射法在LaAlO3(LAO)单晶基片上制备了Pb(Zr0.65Ti0.35)O3(PZT)薄膜。X射线衍射分析显示PZT薄膜与基底有以下外延取向关系:(001)[010]PZT‖(001)[010]SRO‖(001)[010]LAO。虽然PZT薄膜组分位于菱方相区域,但由于基底的夹持效应,透射电子显微镜观察表明PZT薄膜呈现四方相。对以Pt或SRO为上电极的PZT薄膜的电性能分别进行了研究,结果显示两种样品都具有抗疲劳性,并且Pt/PZT/SRO薄膜电容与SRO/PZT/SRO薄膜电容相比具有更大的漏电流。氧化物基片和底电极的引入使得PZT薄膜的居里点与块材相比有所下降。电容-温度测试曲线表现出典型的居里-外斯定律特征,薄膜损耗随着温度上升而下降。当温度接近PZT薄膜相转变点的时候,由于夹持应力的解除导致薄膜损耗急剧下降。 Pb（Zr0.65Ti0.35）O3（PZT） thin films were deposited on LaAlO3（LAO） substrates with SrRuO3（SRO） template layers by RF sputtering method.X-ray diffraction analysis showed that the PZT thin films have the epitaxial orientation relationship of（001）PZT‖（001）SRO‖（001）LAO with the substrates.Transmission electron microscopy observations revealed that the PZT thin films exhibited tetragonal phase,which was attributed to the clamping effect of the substrates.The clamping effect on the electrical properties,especially on the dielectric properties,has been evaluated.Ferroelectric measurements showed that PZT films with LAO/SRO substrates were fatigue free.However,the test of dielectric property dependences on temperature indicated that the Curie temperature of PZT films shifted to low value and the loss tangent decreased with increase of temperature.Owing to the release of clamping-stress,the loss tangent decreased dramatically while the temperature was approaching the phase transition temperature of PZT thin films.
作者 刘敬松 李惠琴 曹林洪 徐光亮
机构地区 西南科技大学四川省非金属复合与功能材料重点实验室-省部共建国家重点实验室培育基地
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2011年第1期70-74,共5页 Journal of Synthetic Crystals
基金 国家高技术研究发展计划(863)(2009AA035002) 四川省教育厅青年基金项目(09ZB095)
关键词 外延生长 Pb(Zr0.65Ti0.35)O3薄膜 射频磁控溅射 漏电流 损耗 epitaxial growth Pb（Zr0.65Ti0.35）O3 thin films RF sputtering method leakage current loss
分类号 TM22 [一般工业技术—材料科学与工程]
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参考文献18

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共引文献5

同被引文献20

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人工晶体学报
2011年 第1期

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