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磷化铟纳米线的溶剂热制备及其表征 被引量:4

Solvothermal Synthesis and Characterization of InP Nanowires
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摘要 以氯化铟和无毒红磷为主要原料,十六烷基三甲基溴化铵为表面活性剂,采用溶剂热法低温合成磷化铟纳米线,并用X射线衍射仪(XRD)和场发射扫描电镜(FESEM)对所制备产物的结构和形貌进行了分析表征;能谱仪(EDS)和荧光分光光度计对所制备产物的成分,含量和发光性质进行了表征。结果表明:采用该方法制备出的磷化铟纳米线长短不同,最小直径为20 nm。在合适的条件下,改变反应温度、增加反应时间或改变碱溶液都可生长出高品质的磷化铟纳米线。 InP nanowires were obtained mildly by a solvothermal method using InCl3·4H2O and red P as main raw materials,cetyltrimethyl ammonium bromide as cationic surfactant.The morphology and crystalline phase of the products were characterized by X-ray diffraction(XRD) and field-emission scanning electron microscopy(FESEM);the composition,content and luminescence of the samples were characterized by energy dispersive spectroscopy(EDS) and fluorescence spectrophotometer.The results indicate that the minimum diameter of InP nanowires is about 20 nm with various lengths.At the appropriate reaction condition,high quality InP nanowires can be obtained by changing the reaction temperature,increasing the reaction time or changing in alkaline solution.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2011年第1期94-99,共6页 Journal of Synthetic Crystals
基金 山西省回国留学人员科研资助项目(2008-37) 山西省回国留学人员重点资助项目(2009-03)
关键词 溶剂热 磷化铟 十六烷基三甲基溴化铵 纳米线 solvothermal InP CTAB nanowires
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参考文献22

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同被引文献51

  • 1王红理,王东,陈光德,刘晖.磷化铟纳米晶的制备及光学性质研究[J].应用光学,2007,28(2):187-190. 被引量:3
  • 2吕红亮,张玉明,张义门.化合物半导体器件[M].北京:电子工业出版社,2009:146-147.
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  • 7Dort A, Allen P M, Bawendi M G. Electrieally Controlling and Monitoring InP Nanowire Growth from Solution [ J ]. A CS Nano. ,2009,3 (10) :3260-3265.
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  • 9Bao K Y, Sun H X, Zhu Lingling, et al. Synthesis of InP Hierarchical Microspheres and Its Optical Property[J]. Sensors and Actuators B,2010 150(2) :649-654.
  • 10Zheng X W, Liu C Z, Xie Y. An Analogous Solution-liquid-solid (ASLS) Growth Route to InP Hollow Spheres and Honeycomb-like Macroporous Framework [ J ]. European Journal of Inorganic Chemistry,2006,12:2364-2369.

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