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超导体二硼化镁电子结构和掺杂研究

Study on the Electronic Structures and Doping of MgB_2 as s Superconductor
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摘要 利用基于密度泛函理论(DFT)的线性缀加平面波方法(LAPW)对多频带双能隙超导体二硼化镁进行电子结构研究,研究了二硼化镁的电子能带图、态密度(DOS)和电荷密度.对二硼化镁进行电子掺杂和空穴掺杂,分别用铝原子代替镁原子,碳原子代替硼原子,对其能带和电荷密度的改变进行探讨. The work is based on the density functional theory,linear augmented plane-wave method.We study the electronic structure of two superconducting energy gap magnesium diboride.During the calculation of electron-doped and hole doping in MgB2,we use aluminum atoms to replace Mg atoms,carbon atoms instead of boron atoms,and discuss the change of the band and charge density.
作者 刘洋
出处 《湖北民族学院学报(自然科学版)》 CAS 2011年第1期35-39,共5页 Journal of Hubei Minzu University(Natural Science Edition)
关键词 高温超导体 二硼化镁 电子结构 掺杂 high temperature superconductor MgB2 electronic structure doping
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参考文献19

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