摘要
在IC芯片封装技术中,引线键合工艺是技术最为成熟的芯片互连技术。引线键合工艺涉及大量参数,对这些参数进行合理设置是对键合质量及可靠性的保证,针对一款microSD卡讨论其引线键合中各工艺参数的设定过程及方法。基于DOE方法,对第一键合点质量影响因素进行分析,采用正交试验法对相关因素进行试验研究,利用极差分析法、方差分析法和F检验对试验数据进行分析,取得相应试验结果,达到了优化参数的目的.
In the IC chip packaging technology,the wire bonding process is the most mature technique of chip interconnect.Wire bonding process involves a large number of parameters,a reasonable set of these parameters is the assurance of bonding quality and reliability. For a microSD card,it discusses the process and method of the various parameters setting in the bonding process. Based on DOE test,this paper analyses the factors which affect the quality of the first bonding point. Orthogonal test is used to study the relevant factors,and with range analysis,variance analysis and F test to analyze the experimental data,the test results with the optimizing parameters were obtained.
出处
《沈阳理工大学学报》
CAS
2010年第6期19-23,37,共6页
Journal of Shenyang Ligong University
关键词
芯片互连
引线键合
工艺参数
正交试验法
优化
chip interconnect
wire bonding
process parameters
orthogonal test
optimization
