全MOS运放的摆率SR与建立时间T_(set)的模拟及其宏模型的建立

SR AND T_(set)CHARACTERISTICS OF ALL-MOS OP AMP AND THE ESTABLISHMENT OF A MACROMODEL OF ALL-MOS OP AMP

主要讨论了全MOS运放的摆率SR和建立时间的模拟方法,并建立了一个全MOS运放宏模型,给出了计算该模型参数的全部公式。该模型能对运放的重要特性进行比较全面的模拟,且模拟精度比较高,它可直接使用SPICE通用分析程序进行直流、交流和瞬态分析。

This paper discusses the circuit simulation of SR and T_(set) characteristics of all-MOS op amp and the establishment of a macromodel of all-MOS op amp. This paper gives also all formulas to calculate the model parameters. Many important characteristics of the MOS op amp can be simulated on the model.Its accuracy is higher than those obtained by Other models. The model oan beused for DC, AC and transient analyses in the SPICE program.