p-n结击穿电压蠕变饱和陷阱理论的改进

THE IMPROVEMENT OF THE THEORY OF WALKOUT IN p-n JUNCTIONS INCLUDING CHARGE TRAPPING SATURATION

在深入分析击穿电压蠕变时间常数τ物理机构的基础上,进一步改进了p-n结击穿电压蠕变饱和陷阱理论,使理论与实验结果更为吻合。

Based on the analysis of the physical mechanism of the walkout time constant τ, the theory of the Walkout in p-n junction, including charge trapping saturation is improved. A good agreement between the theory and experiments is achieved.