摘要
分析了用分子束外延法生长在GaAs(100) 衬底上的Zn1 - xCdxSe/ZnSe 应变层超晶格光学特性.对光致发光谱的温度效应进行了详细的研究.光致发光谱的峰位和线形展宽的温度效应的实验结果与理论分析相一致.从光致发光谱的发光强度得出了该样品的激活能.
Optical characteristics of Zn 0.77 Cd 0.23 Se/ZnSe strained-layer supperlattice grown on GaAs(100)substrates by molecular beam epitaxy is presented.The temperature dependence of PL was inversitgated in detail.The experimental results of temperature dependence of peak position and linewidth were fitted to the theoretical calculations.The activation energy of the sample is derived from the temperature dependence of PL intensity.
关键词
应变层超晶格
光致发光谱
光学特性
Zn_(1-x)Cd_xSe/ZnSe Strained-layer supperlattices Photoluminescence