摘要
利用直流磁控溅射法制备了两组ZAO薄膜,使用60Co放射源对一组薄膜进行了γ射线辐照,在原子氧地面模拟设备中对另一组进行了原子氧辐照,并对辐照前后的样品进行了微观结构、表面形貌及电学特性的表征。结果表明,较高剂量率的γ射线辐照会降低薄膜的结晶程度,而低剂量率的辐照有相反作用。γ射线可激发薄膜中的电子,提高其载流子浓度,最大比率为16.39%。AO辐照仅对ZAO薄膜的表面具有氧化效应,导致表面化学成分中晶格氧比例的提高和薄膜载流子浓度的下降。随着薄膜厚度的增大,载流子浓度的下降比例逐渐减小。
To study and compare the effects of γ ray irradiation and atomic oxygen（AO） treatment on the properties of ZnO∶Al（ZAO） films,two groups of ZAO film samples were prepared by direct current magnetron sputtering.Films in the first group were irradiated by γ ray.Films with different thicknesses in the other group were treated with AO.The microstructures,morphologies and electrical properties of ZAO films before and after the treatments were characterized by modern advanced methods.It is found that high dose of γ ray irradiation decreases the crystallinity of ZAO films,while irradiation with low rate has an annealing effect.γ ray can also excite the electrons,resulting in the increase of the carrier concentration.The highest ratio of increase reaches 16.39%.AO treatment has oxidation effects on the surface of ZAO films,leading to the increase of the content of crystal lattice oxygen.The carrier concentration is accordingly decreased and the ratio of the decrease drops as the film thickness grows.
出处
《宇航材料工艺》
CAS
CSCD
北大核心
2010年第3期39-43,共5页
Aerospace Materials & Technology
基金
自然科学基金(50902006)
航天科技创新基金资助
