GaAs阴极激活铯源质量对成像器件性能的影响

Effects of GaAs Cathode Active Cesium Mass for Imaging Devices

为了解决三代微光器件研究中出现的阴极灵敏度低、光电发射不均匀、稳定性差等问题,重点开展了铯源质量对阴极性能产生影响的试验研究。结果表明,激活铯源纯度、装配结构、铯源与阴极距离对阴极光电发射灵敏度、均匀性影响最大。铯源出口孔径多少大小及射出方向是阴极产生暗班的主要原因。在铯源材料成分结构与阴极距离确定之后,阴极灵敏度的高低主要决定于对铯源的除气工艺,通过对铯源除气工艺进行优化,制备出了阴极灵敏度大于1700μA/lm三代微光器件。

We study the problem of low cathode sensitivity,photoemission asymmetrical and instability in the development of glimmering device and we stress to the influence of cesium mass for the structure and the distance between radius and cathode to the sensitivity and uniformity,it proved that cesium mass diameter and emission distance are the main reason of cathode product dark sport.If we have determined the cesium mater,structure and the distance between radius and cathode,the outgas technology of cesium source is determined in tube sensitivity.Through the technology quantity of cesium outgas,we developed the glimmering devices and sensitivity more 1700 μA/lm.