高效率宽输入范围电荷泵2倍压电路的设计

Design of high efficiency voltage doubler charge pump circuit with wide input range

提出一种无阈值损耗的电荷泵倍压电路(2倍压电路),该电路采用衬底可变单元代替二极管连接的MOS管,消除了MOS器件的体效应及阈值损耗的影响,与传统电荷泵相比效率提高了20%,获得低至1.0V的宽输入范围.基于该结构采用TSMC 0.25μm BCD工艺设计了一款2.0AUSB功率开关芯片,使用spec-tre对整体电路进行了仿真验证,结果表明:该电荷泵电路的工作状态良好,同比输出电压提高了1.0V,效率最高可达90%,基于该工艺实现的电荷泵电路的版图面积仅为0.04mm2.

A novel charge pump voltage doubler without threshold loss was presented. The body effect and threshold loss existing in MOS （metal oxide semiconductor） device were eliminated by the proposed circuit through the means of substituting a type of substrate variable unit for the diode-connected MOSFET （metal oxide semiconductor field effect transistor） in conventional charge pump. Compared with the traditional charge pump, the efficiency of the charge pump was improved by 20%, and the input voltage could be low to 1.0 V. Based on the proposed charge pump, a USB （universal serial bus） power switch chip with 2.0 A output current was designed and implemented by TSMC 0.25μm BCD process. The simulation results by spectre demonstrate that the output voltage of the charge pump voltage doubler increases by 1.0 V compared with the traditional charge pump, and the efficiency is up to 90%. The layout area of the charge pump is only 0.04 mm2.