摘要
文章对MEMS电容并联式射频开关的制作工艺进行了探讨,该射频开关采用双端固定的空气桥结构。通过实验,研究了精细共面波导图形的光刻工艺;采用正胶作为牺牲层,探讨了牺牲层的制作工艺,并分析了牺牲层释放方法对立体结构的影响。
Fabrication technology of RF MEMS switch in parallel connection is discussed in this paper. The double-end fixed bridge structure is used in this switch. The fine lithograph process of co-planar wave-guide figure is discussed through experimets. Finally, the growth of the positive pastern sacrificial layer and its released method affect the performance of switches are also discussed.
出处
《空间电子技术》
2011年第1期71-75,共5页
Space Electronic Technology
